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Postdoctoral Associate - Epitaxial Growth of GaN on Silicon (IRG_LEES_2012_003)

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The SMART Low Energy Electronic Systems (LEES) IRG aims to identify new integrated circuit technologies that become the new added value for reduced energy per function, lower power consumption and higher performance in our electronics infrastructure. These integrated circuits of the future are expected to impact applications in wireless communication, power electronics, LED lighting, printing, displays, and computing. The research is performed by teams that have expertise in materials, devices, and circuits, invoking new advances at all levels to produce electronic systems that perform new function while decreasing system energy. The initial technology goals are in the areas of Power Electronic Systems, Efficient Communications, and Multi-functional Displays and Lighting Systems.

Postdoctoral Associate - Epitaxial Growth of GaN on Silicon (IRG_LEES_2012_003)
Low Energy Electronics Systems Interdisciplinary Research Group (LEES IRG)

There is an opening for Postdoctoral Associate in the area of Epitaxial Growth of GaN on Silicon and its Charaterisation. The goal here is to use the MOCVD process in the SMART labs to create the state-of-the art GaN materials on a silicon-based platform and other engineered substrates. The objective is to seed various steps to provide an integration platform that can be used for devices such as GaN HEMT, high speed transistors and integrated circuits on Si CMOS. It is anticipated that growth experiments will be conducted to find optimal points for low defect density and good device performance. Characterisation is with respect to optical, microstructural and electrical properties.

You will have the opportunity to work with PIs from MIT, NTU and NUS, as well as a larger group of researchers in the low energy electronics system program. You are expected to track the project progress and report your findings in journals/conferences. The appointment is for a 2-year term in the first instance, with possible renewal. There is a possibility that you will be required to spend time at MIT for process training if the situation warrants it.

Requirements:
You need to have a PhD in materials science, electrical engineering or physics. Prior experience with III-V MOCVD epitaxy is essential. Knowledge in semiconductor process integration and optoelectronic/microelectronic device fabrication is a plus.

Application:
Please send a cover letter and updated resume (highlighting your technical expertise and related publications) to Prof. Chua Soo Jin (elecsj@nus.edu.sg) and copy Prof. Eugene Fitzgerald (eafitz@mit.edu) by 15 March 2012. Projected starting date is expected to be the second quarter of 2012.

Please send a cover letter and updated resume (highlighting your technical expertise and related publications) to Prof. Chua Soo Jin (elecsj@nus.edu.sg) and copy Prof. Eugene Fitzgerald (eafitz@mit.edu) by 15 March 2012.

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