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Description & Requirement Postdoctoral position in semiconductor device fabrication and characterization The Silicon Carbide (SiC) Research Laboratory in the Department of Electrical Engineering at University of South Carolina has an opening for a postdoctoral research associate starting immediately. Interested candidates should send their full CVs and a list of 3 references to Dr. Feng Zhao by zhaof2@cec.sc.edu. This is initially a one year position, with renewal after first year contingent upon satisfactory progress. Salary will be commensurate with experience. Responsibilities: The candidate will be responsible for fabrication and electrical characterization of SiC high frequency and high power devices. Other responsibilities include assistance in grant proposal writing, general lab supervision, clean room and facility maintenance. Requirements: An earned doctoral degree (preferably from an accredited US university) with a strong background in semiconductor device R&D is required; Sufficient clean room and process development experience in photolithography, etching, oxidation, metallization, sputtering, annealing, etc. is required; Experience in device characterization is required; Experience in photomask design (CAD, LASI, etc.), device simulation and modeling (Atlas, Medici, etc.) is preferable; Direct experience in SiC or GaN devices is a plus. Contact information: Professor Feng Zhao 3A79 Swearingen Center 301 South Main Street Department of Electrical Engineering University of South Carolina Columbia, SC 29208 Ph: (803) 777-6303 Fax: (803) 777-8045 Application Professor Feng Zhao
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